Diploma / PhD thesis – Laser processing of SiC

HiLASE Centre, part of the Institute of Physics of the Czech Academy of Sciences, is a leader in applied laser research, contributing to a sustainable future, the development of both the Czech and European economies, and inspiring a new generation of scientists, engineers, and innovators. Are you interested in semiconductors, lasers, and applied research? Join our team and participate in the development of laser technologies for processing silicon carbide (SiC)—a key material for electromobility and high-frequency electronics.

Thesis topic: Laser-assisted surface and edge processing of SiC wafers for semiconductor applications

What will you do during the internship?

• Research into laser polishing, grinding, and edge shaping of SiC wafers
• Laser activation of ion implants in SiC
• Advanced laser marking without compromising the mechanical integrity of the wafer
• Collaboration with Onsemi
• Work in the HiLASE laboratory with modern laser systems

What do we offer?

• Flexible working hours adapted to your class schedule
• Direct collaboration with industrial partner (Onsemi)
• Opportunities for publication and applied research
• Expert guidance and support from experienced researchers
• Access to modern equipment and research facilities
• Access to state-of-the-art equipment and expert mentoring
• Opportunity to work in an inspiring international research environment